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STV40N10 Spec and Replacement


   Type Designator: STV40N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 130 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SO10

 STV40N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STV40N10 Specs

 ..1. Size:326K  st
 stv40n10.pdf pdf_icon

STV40N10

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 8.1. Size:291K  st
 stv40ne03l-20.pdf pdf_icon

STV40N10

STV40NE03L-20 N - CHANNEL 30V - 0.014 - 40A - PowerSO-10 STripFET MOSFET TYPE VDSS RDS(on) ID STV40NE03L-20 30 V ... See More ⇒

 8.2. Size:328K  st
 stv40n05.pdf pdf_icon

STV40N10

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Detailed specifications: STP9NA50FI , STV10NA40 , STV12N20 , STV18N20 , STV33N10 , STV36N06 , STV3NA80 , STV40N05 , P60NF06 , STV4N100 , STV4NA60 , STV4NA80 , STV50N05 , STV50N06 , STV55N05L , STV55N06L , STV5NA50 .

History: PMV65ENEA | PDP0959

Keywords - STV40N10 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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