STV40N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: STV40N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 70 nC
trⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SO10
STV40N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STV40N10 Datasheet (PDF)
stv40ne03l-20.pdf
STV40NE03L-20N - CHANNEL 30V - 0.014 - 40A - PowerSO-10STripFET MOSFETTYPE VDSS RDS(on) IDSTV40NE03L-20 30 V
Datasheet: STP9NA50FI , STV10NA40 , STV12N20 , STV18N20 , STV33N10 , STV36N06 , STV3NA80 , STV40N05 , 2SK3561 , STV4N100 , STV4NA60 , STV4NA80 , STV50N05 , STV50N06 , STV55N05L , STV55N06L , STV5NA50 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100