SCT2280KE Specs and Replacement
Type Designator: SCT2280KE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 27 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.364 Ohm
Package: TO-247
SCT2280KE substitution
- MOSFET ⓘ Cross-Reference Search
SCT2280KE datasheet
sct2280ke.pdf
SCT2280KE N-channel SiC power MOSFET Datasheet Outline TO-247 VDSS 1200V RDS(on) (Typ.) 280m ID 14A (3) PD (2) 108W (1) Inner circuit (2) Features (1) Gate 1) Low on-resistance (2) Drain *1 2) Fast switching speed (3) Source (1) 3) Fast reverse recovery *1 Body Diode 4) Easy to parallel (3) 5) Simple to drive Packaging specifications 6) Pb-free lead ... See More ⇒
Detailed specifications: RTM002P02, RTQ020N05HZG, RTQ025P02, RTU002P02, RUC002N05HZGT116, RV2C014BC, SCT2080KE, SCT2160KE, IRF1407, SCT2750NY, SCT2H12NZ, SCT3080KL, SCT3080KLHR, SCT3120AL, SCT3160KL, SP8M24FRA, UM5K1N
Keywords - SCT2280KE MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: ME2309 | AO4294 | NCE3035G
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