All MOSFET. SCT2280KE Datasheet

 

SCT2280KE Datasheet and Replacement


   Type Designator: SCT2280KE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.364 Ohm
   Package: TO-247
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SCT2280KE Datasheet (PDF)

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SCT2280KE

SCT2280KEN-channel SiC power MOSFET DatasheetOutline TO-247VDSS1200VRDS(on) (Typ.)280mID14A(3)PD (2)108W(1)Inner circuit(2)Features(1) Gate1) Low on-resistance(2) Drain*12) Fast switching speed (3) Source(1)3) Fast reverse recovery*1 Body Diode4) Easy to parallel(3)5) Simple to drivePackaging specifications6) Pb-free lead

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1461 | SVGP20110NSTR | IPW60R280E6 | MXP4004AT | APT8020B2FLLG | LSF60R380HT | MEE42942-G

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