All MOSFET. SCT2280KE Datasheet

 

SCT2280KE Datasheet and Replacement


   Type Designator: SCT2280KE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.364 Ohm
   Package: TO-247
 

 SCT2280KE substitution

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SCT2280KE Datasheet (PDF)

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SCT2280KE

SCT2280KEN-channel SiC power MOSFET DatasheetOutline TO-247VDSS1200VRDS(on) (Typ.)280mID14A(3)PD (2)108W(1)Inner circuit(2)Features(1) Gate1) Low on-resistance(2) Drain*12) Fast switching speed (3) Source(1)3) Fast reverse recovery*1 Body Diode4) Easy to parallel(3)5) Simple to drivePackaging specifications6) Pb-free lead

Datasheet: RTM002P02 , RTQ020N05HZG , RTQ025P02 , RTU002P02 , RUC002N05HZGT116 , RV2C014BC , SCT2080KE , SCT2160KE , P0903BDG , SCT2750NY , SCT2H12NZ , SCT3080KL , SCT3080KLHR , SCT3120AL , SCT3160KL , SP8M24FRA , UM5K1N .

History: SML4080BN | K1109 | IPG20N06S2L-35 | SSG4932N | HYG065N15NS1B6 | KF3N60D | HYG065N07NS1B

Keywords - SCT2280KE MOSFET datasheet

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