SCT3120AL MOSFET Datasheet: N-Ch, 650V, 21A. Full specification with pinout and replacement list

SCT3120AL Specs and Replacement

Type Designator: SCT3120AL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 103 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.156 Ohm

Package: TO-247N

SCT3120AL substitution

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SCT3120AL datasheet

..1. Size:897K rohm
sct3120al.pdf pdf_icon

SCT3120AL N-channel SiC power MOSFET Datasheet Outline TO-247N VDSS 650V RDS(on) (Typ.) 120m ID 21A (3) PD 103W (2) (1) Inner circuit (2) Features (1) Gate (2) Drain 1) Low on-resistance (3) Source *1 (1) 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery (3) 4) Easy to parallel Packaging specifications 5) Simple to drive Packing Tube... See More ⇒

9.1. Size:735K rohm
sct3160kl.pdf pdf_icon

SCT3160KL N-channel SiC power MOSFET Datasheet Outline TO-247N VDSS 1200V RDS(on) (Typ.) 160m ID 17A (3) PD 103W (2) (1) Inner circuit (2) Features (1) Gate (2) Drain 1) Low on-resistance (3) Source *1 (1) 2) Fast switching speed *1 Body Diode 3) Fast reverse recovery (3) 4) Easy to parallel Packaging specifications 5) Simple to drive Packing Tub... See More ⇒

Detailed specifications: RV2C014BC, SCT2080KE, SCT2160KE, SCT2280KE, SCT2750NY, SCT2H12NZ, SCT3080KL, SCT3080KLHR, SI2302, SCT3160KL, SP8M24FRA, UM5K1N, UT6MA3, OSG55R074HSZF, OSG55R140HF, OSG55R160FZF, OSG60R180FF