SCT3120AL Datasheet and Replacement
Type Designator: SCT3120AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 103 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.156 Ohm
Package: TO-247N
SCT3120AL substitution
SCT3120AL Datasheet (PDF)
sct3120al.pdf

SCT3120ALN-channel SiC power MOSFET DatasheetOutline TO-247NVDSS650VRDS(on) (Typ.)120mID21A(3) PD103W (2) (1) Inner circuit(2)Features(1) Gate(2) Drain1) Low on-resistance(3) Source*1(1)2) Fast switching speed*1 Body Diode3) Fast reverse recovery(3)4) Easy to parallelPackaging specifications5) Simple to drivePacking Tube
sct3160kl.pdf

SCT3160KLN-channel SiC power MOSFET DatasheetOutline TO-247NVDSS1200VRDS(on) (Typ.)160mID17A(3) PD103W (2) (1) Inner circuit(2)Features(1) Gate(2) Drain1) Low on-resistance(3) Source*1(1)2) Fast switching speed*1 Body Diode3) Fast reverse recovery(3)4) Easy to parallelPackaging specifications5) Simple to drivePacking Tub
Datasheet: RV2C014BC , SCT2080KE , SCT2160KE , SCT2280KE , SCT2750NY , SCT2H12NZ , SCT3080KL , SCT3080KLHR , IRFZ46N , SCT3160KL , SP8M24FRA , UM5K1N , UT6MA3 , OSG55R074HSZF , OSG55R140HF , OSG55R160FZF , OSG60R180FF .
History: SCT2750NY | IRF7306QPBF
Keywords - SCT3120AL MOSFET datasheet
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History: SCT2750NY | IRF7306QPBF



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