OSG60R180FF Specs and Replacement
Type Designator: OSG60R180FF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49.3 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
OSG60R180FF substitution
- MOSFET ⓘ Cross-Reference Search
OSG60R180FF datasheet
Detailed specifications: SCT3120AL, SCT3160KL, SP8M24FRA, UM5K1N, UT6MA3, OSG55R074HSZF, OSG55R140HF, OSG55R160FZF, 2N60, OSG60R180PSF, OSG60R180FSF, OSG60R180ISF, OSG60R180HSF, OSG60R180KSF, OSG60R580FTF, OSG65R1K4AF, OSG65R1K4DF
Keywords - OSG60R180FF MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: DM10N65C-F | 2N6802U | 2SK1337 | MMBF0201NLT1G | SPP80N06S2L-09 | MT4435ACTR | SRC60R045FB
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