STV4NA60 Datasheet. Specs and Replacement

Type Designator: STV4NA60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.4 Ohm

Package: SO10

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STV4NA60 datasheet

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STV4NA60

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Detailed specifications: STV12N20, STV18N20, STV33N10, STV36N06, STV3NA80, STV40N05, STV40N10, STV4N100, AO3400A, STV4NA80, STV50N05, STV50N06, STV55N05L, STV55N06L, STV5NA50, STV5NA80, STV60N03L-12

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