OSG65R1K4AF Specs and Replacement
Type Designator: OSG65R1K4AF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 28.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.7 nS
Cossⓘ - Output Capacitance: 21.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO251
OSG65R1K4AF substitution
- MOSFET ⓘ Cross-Reference Search
OSG65R1K4AF datasheet
osg65r1k4af osg65r1k4df osg65r1k4ff osg65r1k4pf.pdf
OSG65R1K4xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF , Enhancement Mode N-Channel Power MOSFET Genera... See More ⇒
Detailed specifications: OSG55R160FZF, OSG60R180FF, OSG60R180PSF, OSG60R180FSF, OSG60R180ISF, OSG60R180HSF, OSG60R180KSF, OSG60R580FTF, IRF1405, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF, OSG65R260FSF_NB, OSG65R290DEF, OSG65R290FEF, OSG65R290KEF, OSG65R360DTF
Keywords - OSG65R1K4AF MOSFET specs
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OSG65R1K4AF replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SIHFD123 | APM2305AC | JVL102E | SRC60R075FBS | BSC097N06NST | SRC60R125B
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