OSG65R1K4AF Datasheet and Replacement
Type Designator: OSG65R1K4AF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 28.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20.7 nS
Cossⓘ - Output Capacitance: 21.1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO251
OSG65R1K4AF substitution
OSG65R1K4AF Datasheet (PDF)
osg65r1k4af osg65r1k4df osg65r1k4ff osg65r1k4pf.pdf
OSG65R1K4xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF , Enhancement Mode N-Channel Power MOSFET Genera
Datasheet: OSG55R160FZF , OSG60R180FF , OSG60R180PSF , OSG60R180FSF , OSG60R180ISF , OSG60R180HSF , OSG60R180KSF , OSG60R580FTF , IRF1405 , OSG65R1K4DF , OSG65R1K4FF , OSG65R1K4PF , OSG65R260FSF_NB , OSG65R290DEF , OSG65R290FEF , OSG65R290KEF , OSG65R360DTF .
History: 2SK1502 | JMSH0403BG | SI2333DS-T1-GE3 | FDI036N10A | ALD1101BPAL | 2SK3692-01 | JMSH2010PCQ
Keywords - OSG65R1K4AF MOSFET datasheet
OSG65R1K4AF cross reference
OSG65R1K4AF equivalent finder
OSG65R1K4AF lookup
OSG65R1K4AF substitution
OSG65R1K4AF replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: 2SK1502 | JMSH0403BG | SI2333DS-T1-GE3 | FDI036N10A | ALD1101BPAL | 2SK3692-01 | JMSH2010PCQ
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