OSG65R1K4AF MOSFET. Datasheet pdf. Equivalent
Type Designator: OSG65R1K4AF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 28.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.7 nC
trⓘ - Rise Time: 20.7 nS
Cossⓘ - Output Capacitance: 21.1 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO251
OSG65R1K4AF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
OSG65R1K4AF Datasheet (PDF)
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OSG65R1K4xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF , Enhancement Mode N-Channel Power MOSFET Genera
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