OSG65R1K4DF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R1K4DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.7 nC
   trⓘ - Rise Time: 20.7 nS
   Cossⓘ - Output Capacitance: 21.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO252

OSG65R1K4DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

OSG65R1K4DF Datasheet (PDF)

..1. Size:1166K oriental semi
osg65r1k4af osg65r1k4df osg65r1k4ff osg65r1k4pf.pdf

OSG65R1K4xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF , Enhancement Mode N-Channel Power MOSFET Genera

..2. Size:1086K oriental semi
osg65r1k4df.pdf