OSG65R290DEF Datasheet and Replacement
Type Designator: OSG65R290DEF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.5 nS
Cossⓘ - Output Capacitance: 74.1 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO252
OSG65R290DEF substitution
OSG65R290DEF Datasheet (PDF)
osg65r290fef osg65r290def osg65r290kef.pdf
OSG65R290xEF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger EMI and performance balanced OSG65R290FEF, OSG65R290DEF, OSG65R290KEF , Enhancement Mode N-Channel
Datasheet: OSG60R180HSF , OSG60R180KSF , OSG60R580FTF , OSG65R1K4AF , OSG65R1K4DF , OSG65R1K4FF , OSG65R1K4PF , OSG65R260FSF_NB , 60N06 , OSG65R290FEF , OSG65R290KEF , OSG65R360DTF , OSG65R380DEF , OSG65R380FEF , OSG65R580DEF , OSG65R900DTF , OSG70R600FF .
History: CS4N65FA9HD
Keywords - OSG65R290DEF MOSFET datasheet
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History: CS4N65FA9HD
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