OSG65R290DEF Specs and Replacement
Type Designator: OSG65R290DEF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19.5 nS
Cossⓘ - Output Capacitance: 74.1 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO252
OSG65R290DEF substitution
- MOSFET ⓘ Cross-Reference Search
OSG65R290DEF datasheet
osg65r290fef osg65r290def osg65r290kef.pdf
OSG65R290xEF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger EMI and performance balanced OSG65R290FEF, OSG65R290DEF, OSG65R290KEF , Enhancement Mode N-Channel... See More ⇒
Detailed specifications: OSG60R180HSF, OSG60R180KSF, OSG60R580FTF, OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF, OSG65R260FSF_NB, IRLB3034, OSG65R290FEF, OSG65R290KEF, OSG65R360DTF, OSG65R380DEF, OSG65R380FEF, OSG65R580DEF, OSG65R900DTF, OSG70R600FF
Keywords - OSG65R290DEF MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: SW4N70B | MTP2N18 | MTP2N35 | 2N65KL-TND-R | AS2003M | ME35N10-G | AGM40P100A
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