OSG65R290DEF MOSFET. Datasheet pdf. Equivalent

   Type Designator: OSG65R290DEF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 19.5 nS
   Cossⓘ - Output Capacitance: 74.1 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO252

OSG65R290DEF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

OSG65R290DEF Datasheet (PDF)

..1. Size:972K oriental semi
osg65r290def.pdf

..2. Size:991K oriental semi
osg65r290fef osg65r290def osg65r290kef.pdf

OSG65R290xEF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R & FOM Lighting DS(on) Extremely low switching loss Hard switching PWM Excellent stability and uniformity Server power supply Easy to drive Charger EMI and performance balanced OSG65R290FEF, OSG65R290DEF, OSG65R290KEF , Enhancement Mode N-Channel

4.1. Size:1036K oriental semi
osg65r290df.pdf