OSG65R360DTF Datasheet. Specs and Replacement

Type Designator: OSG65R360DTF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.9 nS

Cossⓘ - Output Capacitance: 62.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO252

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OSG65R360DTF substitution

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OSG65R360DTF datasheet

 ..1. Size:872K  oriental semi
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OSG65R360DTF

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 4.1. Size:1032K  oriental semi
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 5.1. Size:893K  oriental semi
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 5.2. Size:901K  oriental semi
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Detailed specifications: OSG65R1K4AF, OSG65R1K4DF, OSG65R1K4FF, OSG65R1K4PF, OSG65R260FSF_NB, OSG65R290DEF, OSG65R290FEF, OSG65R290KEF, IRF520, OSG65R380DEF, OSG65R380FEF, OSG65R580DEF, OSG65R900DTF, OSG70R600FF, OSG70R750DF, OSG80R1K4DF, OSG80R250FF

Keywords - OSG65R360DTF MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs