All MOSFET. OSG65R360DTF Equivalents Search

 

OSG65R360DTF Specs and Replacement


   Type Designator: OSG65R360DTF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33.9 nS
   Cossⓘ - Output Capacitance: 62.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO252
 

 OSG65R360DTF substitution

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OSG65R360DTF Specs

 ..1. Size:872K  oriental semi
 osg65r360dtf.pdf pdf_icon

OSG65R360DTF

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 4.1. Size:1032K  oriental semi
 osg65r360def.pdf pdf_icon

OSG65R360DTF

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 5.1. Size:893K  oriental semi
 osg65r360jef.pdf pdf_icon

OSG65R360DTF

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 5.2. Size:901K  oriental semi
 osg65r360pef.pdf pdf_icon

OSG65R360DTF

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Detailed specifications: OSG65R1K4AF , OSG65R1K4DF , OSG65R1K4FF , OSG65R1K4PF , OSG65R260FSF_NB , OSG65R290DEF , OSG65R290FEF , OSG65R290KEF , AON7403 , OSG65R380DEF , OSG65R380FEF , OSG65R580DEF , OSG65R900DTF , OSG70R600FF , OSG70R750DF , OSG80R1K4DF , OSG80R250FF .

Keywords - OSG65R360DTF MOSFET specs

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