OSG80R1K4DF Datasheet. Specs and Replacement

Type Designator: OSG80R1K4DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.7 nS

Cossⓘ - Output Capacitance: 25.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO252

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OSG80R1K4DF datasheet

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Detailed specifications: OSG65R290KEF, OSG65R360DTF, OSG65R380DEF, OSG65R380FEF, OSG65R580DEF, OSG65R900DTF, OSG70R600FF, OSG70R750DF, IRF9640, OSG80R250FF, SFG08R06DF, SFG100N08PF, SFG10S10PF, SFS06R03DF, SFS06R03PF, SFS06R06DF, SFS06R06PF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.