OSG80R1K4DF Specs and Replacement
Type Designator: OSG80R1K4DF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 25.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO252
OSG80R1K4DF substitution
OSG80R1K4DF Specs
Detailed specifications: OSG65R290KEF , OSG65R360DTF , OSG65R380DEF , OSG65R380FEF , OSG65R580DEF , OSG65R900DTF , OSG70R600FF , OSG70R750DF , 60N06 , OSG80R250FF , SFG08R06DF , SFG100N08PF , SFG10S10PF , SFS06R03DF , SFS06R03PF , SFS06R06DF , SFS06R06PF .
History: FDD6780A | NTTFS5CS70NL
Keywords - OSG80R1K4DF MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
