OSG80R250FF Specs and Replacement
Type Designator: OSG80R250FF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.9 nS
Cossⓘ - Output Capacitance: 136 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO220F
OSG80R250FF substitution
- MOSFET ⓘ Cross-Reference Search
OSG80R250FF datasheet
Detailed specifications: OSG65R360DTF, OSG65R380DEF, OSG65R380FEF, OSG65R580DEF, OSG65R900DTF, OSG70R600FF, OSG70R750DF, OSG80R1K4DF, IRFP064N, SFG08R06DF, SFG100N08PF, SFG10S10PF, SFS06R03DF, SFS06R03PF, SFS06R06DF, SFS06R06PF, F501D
Keywords - OSG80R250FF MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPI180N10N3
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