SFG08R06DF Specs and Replacement
Type Designator: SFG08R06DF
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 148 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21.5 nS
Cossⓘ - Output Capacitance: 1304.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO252
SFG08R06DF substitution
- MOSFET ⓘ Cross-Reference Search
SFG08R06DF datasheet
Detailed specifications: OSG65R380DEF, OSG65R380FEF, OSG65R580DEF, OSG65R900DTF, OSG70R600FF, OSG70R750DF, OSG80R1K4DF, OSG80R250FF, AO4468, SFG100N08PF, SFG10S10PF, SFS06R03DF, SFS06R03PF, SFS06R06DF, SFS06R06PF, F501D, PIP8205-S8
Keywords - SFG08R06DF MOSFET specs
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History: 4N65L-TQ2-R
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