2SK2135 Specs and Replacement
Type Designator: 2SK2135
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ -
Output Capacitance: 540 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
- MOSFET ⓘ Cross-Reference Search
2SK2135 datasheet
8.3. Size:124K 1
2sk2137.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2137 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2137 is N-Channel MOS Field Effect Transistor de- (in millimeters) signed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Low On-Resistance 2SK2137 RDS(on) = 2.4 (VGS = 10 V, ID = 2.0 A) Low Cis... See More ⇒
8.5. Size:135K 1
2sk2138 2sk2138-z.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2138, 2SK2138-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2138, 2SK2138-Z is N-channel Power MOS Field Effect (in millimeters) Transistor designed for high voltage switching applications. 10.6 MAX. 4.8 MAX. 3.6 0.2 FEATURES 1.3 0.2 10.0 Low On-state Resistance RDS(on) = 2.4 MAX.... See More ⇒
8.6. Size:71K renesas
rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
8.8. Size:111K nec
2sk2139.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2139 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2139 is N-Channel Power MOS Field Effect Transistor (in millimeters) designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES Low On-Resistance RDS(on) = 1.5 MAX. (VGS = 10 V, ID = 2.5 A) Low Cis... See More ⇒
8.11. Size:31K panasonic
2sk2130.pdf
Power F-MOS FETs 2SK2130 2SK2130 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 15mJ 4.6 0.2 9.9 0.3 2.9 0.2 VGSS= 30V guaranteed 3.2 0.1 High-speed switching tf= 45ns No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive... See More ⇒
8.12. Size:33K hitachi
2sk213 2sk214 2sk215 2sk216.pdf
2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 1 D 2 3 1. Gate G 2. Source (Flange) 3. D... See More ⇒
Detailed specifications: 2SK2109, 2SK2110, 2SK2111, 2SK2112, 2SK2131, 2SK2132, 2SK2133, 2SK2134, IRFB3607, 2SK2136, 2SK2137, 2SK2138, 2SK2139, 2SK2140, 2SK2141, 2SK2157, 2SK2158
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
