SFG10S10PF PDF and Equivalents Search

 

SFG10S10PF Specs and Replacement

Type Designator: SFG10S10PF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 322 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO220

SFG10S10PF substitution

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SFG10S10PF datasheet

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 6.2. Size:826K  oriental semi
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 7.1. Size:921K  oriental semi
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Detailed specifications: OSG65R580DEF, OSG65R900DTF, OSG70R600FF, OSG70R750DF, OSG80R1K4DF, OSG80R250FF, SFG08R06DF, SFG100N08PF, IRFZ44N, SFS06R03DF, SFS06R03PF, SFS06R06DF, SFS06R06PF, F501D, PIP8205-S8, PIP8205-Z6, PSA04N65B

Keywords - SFG10S10PF MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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