SFG10S10PF MOSFET. Datasheet pdf. Equivalent

   Type Designator: SFG10S10PF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Total Gate Charge (Qg): 28.9 nC
   Rise Time (tr): 5.2 nS
   Drain-Source Capacitance (Cd): 322 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.01 Ohm
   Package: TO220

SFG10S10PF Transistor Equivalent Substitute - MOSFET Cross-Reference Search