PSA04N65B Specs and Replacement
Type Designator: PSA04N65B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-220F
PSA04N65B substitution
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PSA04N65B datasheet
psa04n65b.pdf
PSA04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.9 4.0A RDS(ON),typ.=1.9 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power G D S Ordering Information TO-220F Part Number Package Brand Package No to Scale PSA0... See More ⇒
Detailed specifications: SFG10S10PF, SFS06R03DF, SFS06R03PF, SFS06R06DF, SFS06R06PF, F501D, PIP8205-S8, PIP8205-Z6, IRFP460, PSA06N40, PSP06N40, PSA07N65, PSA10N60C, PSA10N65C, PSA13N50, PSP13N50, PSP06N70
Keywords - PSA04N65B MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AOTF8N65 | JMSH0602PC | ISA07N65A | IPP076N12N3 | CPC3720 | 1H10 | S2N7002K
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