All MOSFET. PSA04N65B Datasheet

 

PSA04N65B Datasheet and Replacement


   Type Designator: PSA04N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-220F
 

 PSA04N65B substitution

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PSA04N65B Datasheet (PDF)

 ..1. Size:658K  pipsemi
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PSA04N65B

PSA04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.9 4.0A RDS(ON),typ.=1.9 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Standby Power G D S Ordering Information TO-220F Part Number Package Brand Package No to Scale PSA0

Datasheet: SFG10S10PF , SFS06R03DF , SFS06R03PF , SFS06R06DF , SFS06R06PF , F501D , PIP8205-S8 , PIP8205-Z6 , IRF640 , PSA06N40 , PSP06N40 , PSA07N65 , PSA10N60C , PSA10N65C , PSA13N50 , PSP13N50 , PSP06N70 .

History: JFPC10N60CI | 2SK2850-01

Keywords - PSA04N65B MOSFET datasheet

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