STV50N06 Specs and Replacement
Type Designator: STV50N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.056 Ohm
Package: SO10
STV50N06 substitution
- MOSFET ⓘ Cross-Reference Search
STV50N06 datasheet
Detailed specifications: STV36N06, STV3NA80, STV40N05, STV40N10, STV4N100, STV4NA60, STV4NA80, STV50N05, IRF1405, STV55N05L, STV55N06L, STV5NA50, STV5NA80, STV60N03L-12, STV60N05, STV60N05-16, STV60N06
Keywords - STV50N06 MOSFET specs
STV50N06 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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