All MOSFET. PSA10N65C Datasheet

 

PSA10N65C Datasheet and Replacement


   Type Designator: PSA10N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO-220F
 

 PSA10N65C substitution

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PSA10N65C Datasheet (PDF)

 ..1. Size:739K  pipsemi
 psa10n65c.pdf pdf_icon

PSA10N65C

PSA10N65C 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 0.70 10A RDS(ON),typ.=0.70 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D SMPS Standby Power S TO-220F Ordering Information Part Number Package Brand Package No to Scale PSA1

 7.1. Size:743K  pipsemi
 psa10n60c.pdf pdf_icon

PSA10N65C

PSA10N60C 600V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 600V 0.65 10A RDS(ON),typ.=0.65 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D SMPS Standby Power S TO-220F Ordering Information Part Number Package Brand Package No to Scale PSA1

 8.1. Size:696K  pipsemi
 psp10n70 psa10n70.pdf pdf_icon

PSA10N65C

PSP10N70 PSA10N70 700V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 700V 0.80 10A RDS(ON),typ.=0.80 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand

Datasheet: F501D , PIP8205-S8 , PIP8205-Z6 , PSA04N65B , PSA06N40 , PSP06N40 , PSA07N65 , PSA10N60C , IRF640N , PSA13N50 , PSP13N50 , PSP06N70 , PSA06N70 , PSP10N70 , PSA10N70 , PSU04N65B , PSD04N65B .

History: STP130N6F7

Keywords - PSA10N65C MOSFET datasheet

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