PSA10N65C MOSFET Datasheet: N-Ch, 650V, 10A. Full specification with pinout and replacement list

PSA10N65C Specs and Replacement

Type Designator: PSA10N65C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO-220F

PSA10N65C substitution

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PSA10N65C datasheet

..1. Size:739K pipsemi
psa10n65c.pdf pdf_icon

PSA10N65C 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 0.70 10A RDS(ON),typ.=0.70 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D SMPS Standby Power S TO-220F Ordering Information Part Number Package Brand Package No to Scale PSA1... See More ⇒

7.1. Size:743K pipsemi
psa10n60c.pdf pdf_icon

PSA10N60C 600V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 600V 0.65 10A RDS(ON),typ.=0.65 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D SMPS Standby Power S TO-220F Ordering Information Part Number Package Brand Package No to Scale PSA1... See More ⇒

8.1. Size:696K pipsemi
psp10n70 psa10n70.pdf pdf_icon

PSP10N70 PSA10N70 700V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 700V 0.80 10A RDS(ON),typ.=0.80 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand ... See More ⇒

Detailed specifications: F501D, PIP8205-S8, PIP8205-Z6, PSA04N65B, PSA06N40, PSP06N40, PSA07N65, PSA10N60C, IRFB4110, PSA13N50, PSP13N50, PSP06N70, PSA06N70, PSP10N70, PSA10N70, PSU04N65B, PSD04N65B