All MOSFET. PSP10N70 Datasheet

 

PSP10N70 Datasheet and Replacement


   Type Designator: PSP10N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 218 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO-220
 

 PSP10N70 substitution

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PSP10N70 Datasheet (PDF)

 ..1. Size:696K  pipsemi
 psp10n70 psa10n70.pdf pdf_icon

PSP10N70

PSP10N70 PSA10N70 700V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 700V 0.80 10A RDS(ON),typ.=0.80 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand

Datasheet: PSP06N40 , PSA07N65 , PSA10N60C , PSA10N65C , PSA13N50 , PSP13N50 , PSP06N70 , PSA06N70 , IRFB4115 , PSA10N70 , PSU04N65B , PSD04N65B , PSU07N65 , PSD07N65 , PTA04N100 , PTA04N80 , PTA05N65 .

History: SSW65R090S2 | RDX080N50FU6 | SPP80N06S2L-09 | 2SK3058-ZJ | AP2N1K2EN1 | MTB02N03H8

Keywords - PSP10N70 MOSFET datasheet

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