PSP10N70 Datasheet and Replacement
Type Designator: PSP10N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 218 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-220
PSP10N70 substitution
PSP10N70 Datasheet (PDF)
psp10n70 psa10n70.pdf
PSP10N70 PSA10N70 700V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 700V 0.80 10A RDS(ON),typ.=0.80 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand
Datasheet: PSP06N40 , PSA07N65 , PSA10N60C , PSA10N65C , PSA13N50 , PSP13N50 , PSP06N70 , PSA06N70 , IRF3710 , PSA10N70 , PSU04N65B , PSD04N65B , PSU07N65 , PSD07N65 , PTA04N100 , PTA04N80 , PTA05N65 .
History: APT6025SVR
Keywords - PSP10N70 MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: APT6025SVR
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