PSP10N70 MOSFET. Datasheet pdf. Equivalent
Type Designator: PSP10N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 218 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-220
PSP10N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PSP10N70 Datasheet (PDF)
..1. Size:696K pipsemi
psp10n70 psa10n70.pdf
psp10n70 psa10n70.pdf
PSP10N70 PSA10N70 700V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 700V 0.80 10A RDS(ON),typ.=0.80 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WMK12N65D1B
