PSP10N70 Datasheet. Specs and Replacement
Type Designator: PSP10N70 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 218 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 150 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO-220
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PSP10N70 substitution
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PSP10N70 datasheet
psp10n70 psa10n70.pdf
PSP10N70 PSA10N70 700V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 700V 0.80 10A RDS(ON),typ.=0.80 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand ... See More ⇒
Detailed specifications: PSP06N40, PSA07N65, PSA10N60C, PSA10N65C, PSA13N50, PSP13N50, PSP06N70, PSA06N70, IRF3710, PSA10N70, PSU04N65B, PSD04N65B, PSU07N65, PSD07N65, PTA04N100, PTA04N80, PTA05N65
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