STV55N05L PDF and Equivalents Search

 

STV55N05L Specs and Replacement

Type Designator: STV55N05L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 950 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: SO10

STV55N05L substitution

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STV55N05L datasheet

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STV55N05L

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Detailed specifications: STV3NA80, STV40N05, STV40N10, STV4N100, STV4NA60, STV4NA80, STV50N05, STV50N06, 7N60, STV55N06L, STV5NA50, STV5NA80, STV60N03L-12, STV60N05, STV60N05-16, STV60N06, STV6NA60

Keywords - STV55N05L MOSFET specs

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