PSU04N65B Datasheet and Replacement
Type Designator: PSU04N65B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 86 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 50 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-251
PSU04N65B substitution
PSU04N65B Datasheet (PDF)
psu04n65b psd04n65b.pdf
PSU04N65B PSD04N65B 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 1.9 4.0A RDS(ON),typ.=1.9 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G G Charger D D S SMPS Standby Power S TO-251 TO-252 Ordering Information Part Number Package Br
Datasheet: PSA10N60C , PSA10N65C , PSA13N50 , PSP13N50 , PSP06N70 , PSA06N70 , PSP10N70 , PSA10N70 , AON6414A , PSD04N65B , PSU07N65 , PSD07N65 , PTA04N100 , PTA04N80 , PTA05N65 , PTA07N65B , PTA08N100 .
History: SWB062R68E7T | SEFM150
Keywords - PSU04N65B MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SWB062R68E7T | SEFM150
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