PTA26N70 Datasheet and Replacement
Type Designator: PTA26N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 1400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO-220F
PTA26N70 substitution
PTA26N70 Datasheet (PDF)
pta26n70.pdf

PTA26N70 700V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 700V 350m 26A RDS(ON),typ.=350 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package P
pta26n60.pdf

PTA26N60 600V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 600V 250m 26A RDS(ON),typ.=250 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package P
pta26n65.pdf

PTA26N65 650V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 650V 280m 26A RDS(ON),typ.=280 m@VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS G D S Ordering Information Part Number Package Brand TO-220F Package
Datasheet: PTA08N100 , PTA09N45 , PTA13N45 , PTA22N60 , PTA22N65 , PTA25N50 , PTA26N60 , PTA26N65 , AO3400 , PTA28N50 , PTF12N90 , PTF27N80 , PTH03N150 , PTA03N150 , PTP01N04N , PTP02N03N , PTP02N04N .
Keywords - PTA26N70 MOSFET datasheet
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History: AOT7S65 | H2N65D



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