PTP02N04NB Datasheet. Specs and Replacement

Type Designator: PTP02N04NB  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 245 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 910 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm

Package: TO-220

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PTP02N04NB datasheet

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PTP02N04NB

PTP02N04NB 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 40V 1.65m 245A RDS(ON),typ.=1.65 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G UPS Inverter D S Ordering Information TO-220 ... See More ⇒

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PTP02N04NB

PTP02N04N 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 40V 1.6m 280A RDS(ON),typ.=1.6 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS Inverter Ordering Information Part Number Package B... See More ⇒

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PTP02N04NB

PTP02N03N 30V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 30V 2.6m 120A RDS(ON),typ.=2.6 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters G Motor Bridge Switch D S Oring FET/Load Switching TO-220 Ordering Informatio... See More ⇒

Detailed specifications: PTA28N50, PTF12N90, PTF27N80, PTH03N150, PTA03N150, PTP01N04N, PTP02N03N, PTP02N04N, 12N60, PTP04N04A, PTP08N06N, PTP08N06NB, PTP08N08NA, PTP08N65, PTA08N65, PTP09N50, PTA09N50

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