PTP02N04NB Datasheet and Replacement
Type Designator: PTP02N04NB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 245 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 910 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: TO-220
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PTP02N04NB Datasheet (PDF)
ptp02n04nb.pdf

PTP02N04NB 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 40V 1.65m 245A RDS(ON),typ.=1.65 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G UPS Inverter D S Ordering Information TO-220
ptp02n04n.pdf

PTP02N04N40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 40V 1.6m 280A RDS(ON),typ.=1.6 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS InverterOrdering Information Part Number Package B
ptp02n03n.pdf

PTP02N03N 30V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 30V 2.6m 120A RDS(ON),typ.=2.6 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters G Motor Bridge Switch D S Oring FET/Load Switching TO-220 Ordering Informatio
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: MDU1517RH | DH100P70I | NCEP3045BGU | 2SJ365 | BSP75GQ | 2SK1214 | WM02N20G
Keywords - PTP02N04NB MOSFET datasheet
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History: MDU1517RH | DH100P70I | NCEP3045BGU | 2SJ365 | BSP75GQ | 2SK1214 | WM02N20G



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