All MOSFET. PTP02N04NB Datasheet

 

PTP02N04NB Datasheet and Replacement


   Type Designator: PTP02N04NB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 245 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 910 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: TO-220
 

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PTP02N04NB Datasheet (PDF)

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PTP02N04NB

PTP02N04NB 40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 40V 1.65m 245A RDS(ON),typ.=1.65 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification G UPS Inverter D S Ordering Information TO-220

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PTP02N04NB

PTP02N04N40V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID[2] Proprietary New Trench Technology 40V 1.6m 280A RDS(ON),typ.=1.6 m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters Synchronous Rectification UPS InverterOrdering Information Part Number Package B

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 ptp02n03n.pdf pdf_icon

PTP02N04NB

PTP02N03N 30V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Trench Technology 30V 2.6m 120A RDS(ON),typ.=2.6 m@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications High efficiency DC/DC Converters G Motor Bridge Switch D S Oring FET/Load Switching TO-220 Ordering Informatio

Datasheet: PTA28N50 , PTF12N90 , PTF27N80 , PTH03N150 , PTA03N150 , PTP01N04N , PTP02N03N , PTP02N04N , 4N60 , PTP04N04A , PTP08N06N , PTP08N06NB , PTP08N08NA , PTP08N65 , PTA08N65 , PTP09N50 , PTA09N50 .

History: VBE1695 | P0903BT | DMP4025LSD | IXFH80N15Q | IXTC13N50 | 2SJ505S | CEB10N65

Keywords - PTP02N04NB MOSFET datasheet

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