All MOSFET. PTA08N65 Datasheet

 

PTA08N65 Datasheet and Replacement


   Type Designator: PTA08N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-220F
 

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PTA08N65 Datasheet (PDF)

 ..1. Size:569K  pipsemi
 ptp08n65 pta08n65.pdf pdf_icon

PTA08N65

PTP08N65PTA08N65N-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Typ.) ID Adaptor Charger650 V 0.85 8 A SMPS Power Supply LCD Panel PowerDFeatures: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width CurveGGGOrdering InformationDSDS TO-220FTO-220 SPART NUMBER PACKAGE

 8.1. Size:392K  pipsemi
 pta08n100.pdf pdf_icon

PTA08N65

PTA08N100 1000V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 1000V 1.2 8.0A RDS(ON),typ.=1.2 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G SMPS Standby Power D S Ordering Information TO-220F Part Number Package Brand Package No to Scale PTA08N100 TO-220F Ab

Datasheet: PTP02N03N , PTP02N04N , PTP02N04NB , PTP04N04A , PTP08N06N , PTP08N06NB , PTP08N08NA , PTP08N65 , IRLB4132 , PTP09N50 , PTA09N50 , PTP09N90 , PTA09N90 , PTP10N40B , PTA10N40B , PTP10N80 , PTA10N80 .

History: L2N7002KDW1T1G | TF2015 | APT8020B2LL | HFS12N65U | FP8V50 | HM2300PR | BRF4N60

Keywords - PTA08N65 MOSFET datasheet

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