PTA09N50 Datasheet. Specs and Replacement

Type Designator: PTA09N50  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220F

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PTA09N50 datasheet

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 ptp09n50 pta09n50.pdf pdf_icon

PTA09N50

PTP09N50 PTA09N50 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 500V 0.55 9A RDS(ON),typ.=0.55 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTP09N50 ... See More ⇒

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PTA09N50

PTA09N45 450V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 450V 0.48 9A RDS(ON),typ.=0.48 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D Other Applications S Ordering Information TO-220F Part Number Package Brand Package No... See More ⇒

 8.2. Size:883K  pipsemi
 ptp09n90 pta09n90.pdf pdf_icon

PTA09N50

PTP09N90 PTA09N90 900V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 900V 1.2 9A RDS(ON),typ.=1.2 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTP09N90 TO-220 PTA09N90 ... See More ⇒

Detailed specifications: PTP02N04NB, PTP04N04A, PTP08N06N, PTP08N06NB, PTP08N08NA, PTP08N65, PTA08N65, PTP09N50, AON7506, PTP09N90, PTA09N90, PTP10N40B, PTA10N40B, PTP10N80, PTA10N80, PTP11N08A, PTP11N40

Keywords - PTA09N50 MOSFET specs

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