PTP10N80 Datasheet. Specs and Replacement
Type Designator: PTP10N80 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
Package: TO-220
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PTP10N80 substitution
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PTP10N80 datasheet
ptp10n80 pta10n80.pdf
PTP10N80 PTA10N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 800V 1.0 10A RDS(ON),typ.=1.0 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications ATX Power G LCD Panel Power D S G D S Ordering Information Part Number Package Brand TO-220 TO-220F ... See More ⇒
ptp10n40b pta10n40b.pdf
PTP10N40B PTA10N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.45 10A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number... See More ⇒
ptp10hn10.pdf
PTP10HN10 100V/100A N-Chnnel MOSFET Features D 100V/100A RDS(ON)=7.1m (typ.)@ VGS=10V G Lead free and Green Device Available Low Rds-on to Minimize Conductive Loss High avalanche Current % 100 Avalanche Tested Application Power Supply TO-220 DC-DC Converters UPS Battery Manageme ent System Absolute Maximum Ratings (T =25 C unless otherwise noted) A Sy... See More ⇒
Detailed specifications: PTP08N65, PTA08N65, PTP09N50, PTA09N50, PTP09N90, PTA09N90, PTP10N40B, PTA10N40B, BS170, PTA10N80, PTP11N08A, PTP11N40, PTA11N40, PTP11N45, PTA11N45, PTP12N60, PTA12N60
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