All MOSFET. PTA10N80 Datasheet

 

PTA10N80 Datasheet and Replacement


   Type Designator: PTA10N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.15 Ohm
   Package: TO-220F
 

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PTA10N80 Datasheet (PDF)

 ..1. Size:909K  pipsemi
 ptp10n80 pta10n80.pdf pdf_icon

PTA10N80

PTP10N80 PTA10N80 800V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 800V 1.0 10A RDS(ON),typ.=1.0 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications ATX Power G LCD Panel Power D S G D S Ordering Information Part Number Package Brand TO-220 TO-220F

 8.1. Size:827K  pipsemi
 ptp10n40b pta10n40b.pdf pdf_icon

PTA10N80

PTP10N40B PTA10N40B 400V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 400V 0.45 10A RDS(ON),typ.=0.45 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Ballast and Lighting DC-AC Inverter G D S G D Other Applications S Ordering Information TO-220 TO-220F Part Number

Datasheet: PTA08N65 , PTP09N50 , PTA09N50 , PTP09N90 , PTA09N90 , PTP10N40B , PTA10N40B , PTP10N80 , 10N65 , PTP11N08A , PTP11N40 , PTA11N40 , PTP11N45 , PTA11N45 , PTP12N60 , PTA12N60 , PTP12N65 .

History: CTLM8110-M832D | HSS2306A

Keywords - PTA10N80 MOSFET datasheet

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