All MOSFET. PTA12N60 Datasheet

 

PTA12N60 Datasheet and Replacement


   Type Designator: PTA12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220F
 

 PTA12N60 substitution

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PTA12N60 Datasheet (PDF)

 ..1. Size:684K  pipsemi
ptp12n60 pta12n60.pdf pdf_icon

PTA12N60

PTP12N60 PTA12N60 600V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 600V 0.55 12A RDS(ON),typ.=0.55 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand

 7.1. Size:571K  pipsemi
ptp12n65 pta12n65.pdf pdf_icon

PTA12N60

PTP12N65 PTA12N65 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 0.60 12A RDS(ON),typ.=0.60 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand

Datasheet: PTP10N80 , PTA10N80 , PTP11N08A , PTP11N40 , PTA11N40 , PTP11N45 , PTA11N45 , PTP12N60 , IRFZ46N , PTP12N65 , PTA12N65 , PTP13N50B , PTA13N50B , PTP13N60 , PTA13N60 , PTP13N65 , PTA13N65 .

History: CEB6086 | AP60WN2K3H

Keywords - PTA12N60 MOSFET datasheet

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