PTA12N60 Datasheet. Specs and Replacement

Type Designator: PTA12N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO-220F

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PTA12N60 datasheet

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PTA12N60

PTP12N60 PTA12N60 600V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 600V 0.55 12A RDS(ON),typ.=0.55 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand ... See More ⇒

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ptp12n65 pta12n65.pdf pdf_icon

PTA12N60

PTP12N65 PTA12N65 650V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 650V 0.60 12A RDS(ON),typ.=0.60 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand ... See More ⇒

Detailed specifications: PTP10N80, PTA10N80, PTP11N08A, PTP11N40, PTA11N40, PTP11N45, PTA11N45, PTP12N60, SI2302, PTP12N65, PTA12N65, PTP13N50B, PTA13N50B, PTP13N60, PTA13N60, PTP13N65, PTA13N65

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