All MOSFET. PTW09N90 Datasheet

 

PTW09N90 Datasheet and Replacement


   Type Designator: PTW09N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-3P
 

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PTW09N90 Datasheet (PDF)

 ..1. Size:875K  pipsemi
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PTW09N90

PTW09N90 900V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 900V 1.12 9A RDS(ON),typ.=1.12 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTW09N90 TO-3P Absolute Maximum Rat

Datasheet: PTA20N65A , PTP20N70A , PTA20N70A , PTP23N10A , PTP40N20 , PTP540 , PTP9506E , PTB9506E , IRF840 , PTW20N50A , PTW28N50 , PTW30N50EL , PTW36N60 , PTW50N20 , PTW69N30 , PTW90N20 , SPTA60R130E .

History: FP8V50 | SFF23N60Z

Keywords - PTW09N90 MOSFET datasheet

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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