PTW09N90 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTW09N90
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 240 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 48 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: TO-3P
PTW09N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTW09N90 Datasheet (PDF)
..1. Size:875K pipsemi
ptw09n90.pdf
ptw09n90.pdf
PTW09N90 900V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 900V 1.12 9A RDS(ON),typ.=1.12 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTW09N90 TO-3P Absolute Maximum Rat
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