PTW30N50EL Datasheet and Replacement
Type Designator: PTW30N50EL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 114 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-3P
PTW30N50EL substitution
PTW30N50EL Datasheet (PDF)
ptw30n50el.pdf

PTW30N50EL 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 150m 30A RDS(ON),typ.=150 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTW30N5
Datasheet: PTP23N10A , PTP40N20 , PTP540 , PTP9506E , PTB9506E , PTW09N90 , PTW20N50A , PTW28N50 , IRF540N , PTW36N60 , PTW50N20 , PTW69N30 , PTW90N20 , SPTA60R130E , SPTA65R350E , SPTP65R160 , SPTA65R160 .
History: NTMFS5C645NLT1G | 3SK295 | SNN10R10LD | STB25NM50N | IRF6614PBF | STQ2HNK60Z-AP | IRF8734PBF
Keywords - PTW30N50EL MOSFET datasheet
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History: NTMFS5C645NLT1G | 3SK295 | SNN10R10LD | STB25NM50N | IRF6614PBF | STQ2HNK60Z-AP | IRF8734PBF



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