All MOSFET. PTW30N50EL Datasheet

 

PTW30N50EL Datasheet and Replacement


   Type Designator: PTW30N50EL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 114 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-3P
 

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PTW30N50EL Datasheet (PDF)

 ..1. Size:750K  pipsemi
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PTW30N50EL

PTW30N50EL 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 150m 30A RDS(ON),typ.=150 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTW30N5

Datasheet: PTP23N10A , PTP40N20 , PTP540 , PTP9506E , PTB9506E , PTW09N90 , PTW20N50A , PTW28N50 , IRF540 , PTW36N60 , PTW50N20 , PTW69N30 , PTW90N20 , SPTA60R130E , SPTA65R350E , SPTP65R160 , SPTA65R160 .

History: IRF7842

Keywords - PTW30N50EL MOSFET datasheet

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