PTW30N50EL Specs and Replacement
Type Designator: PTW30N50EL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 114 nS
Cossⓘ - Output Capacitance: 500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-3P
PTW30N50EL substitution
- MOSFET ⓘ Cross-Reference Search
PTW30N50EL datasheet
ptw30n50el.pdf
PTW30N50EL 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 150m 30A RDS(ON),typ.=150 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTW30N5... See More ⇒
Detailed specifications: PTP23N10A, PTP40N20, PTP540, PTP9506E, PTB9506E, PTW09N90, PTW20N50A, PTW28N50, IRF540, PTW36N60, PTW50N20, PTW69N30, PTW90N20, SPTA60R130E, SPTA65R350E, SPTP65R160, SPTA65R160
Keywords - PTW30N50EL MOSFET specs
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History: AP4578GH-HF | PNTK3139PT5G | 2SK2654-01 | BRCS3400MC | AP4936GM | AP4513GH-A | 2SK3829
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