PTW30N50EL PDF and Equivalents Search

 

PTW30N50EL Specs and Replacement

Type Designator: PTW30N50EL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 333 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 114 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-3P

PTW30N50EL substitution

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PTW30N50EL datasheet

 ..1. Size:750K  pipsemi
ptw30n50el.pdf pdf_icon

PTW30N50EL

PTW30N50EL 500V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Advanced Planar Process 500V 150m 30A RDS(ON),typ.=150 m @VGS=10V Low Gate Charge Minimize Switching Loss Rugged Poly silicon Gate Structure Applications BLDC Motor Driver Electric Welder High Efficiency SMPS Ordering Information Part Number Package Brand PTW30N5... See More ⇒

Detailed specifications: PTP23N10A, PTP40N20, PTP540, PTP9506E, PTB9506E, PTW09N90, PTW20N50A, PTW28N50, IRF540, PTW36N60, PTW50N20, PTW69N30, PTW90N20, SPTA60R130E, SPTA65R350E, SPTP65R160, SPTA65R160

Keywords - PTW30N50EL MOSFET specs

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