PTW50N20 MOSFET. Datasheet pdf. Equivalent
Type Designator: PTW50N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 210 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 660 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO-3P
PTW50N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PTW50N20 Datasheet (PDF)
..1. Size:868K pipsemi
ptw50n20.pdf
ptw50n20.pdf
PTW50N20 200V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 200V 40m 50A RDS(ON),typ.=40m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTW50
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