All MOSFET. PTW50N20 Datasheet

 

PTW50N20 Datasheet and Replacement


   Type Designator: PTW50N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 660 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-3P
 

 PTW50N20 substitution

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PTW50N20 Datasheet (PDF)

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PTW50N20

PTW50N20 200V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 200V 40m 50A RDS(ON),typ.=40m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTW50

Datasheet: PTP540 , PTP9506E , PTB9506E , PTW09N90 , PTW20N50A , PTW28N50 , PTW30N50EL , PTW36N60 , IRF640 , PTW69N30 , PTW90N20 , SPTA60R130E , SPTA65R350E , SPTP65R160 , SPTA65R160 , RU1H150R , RU1H150S .

History: FHP3710C | JCS24N50ABH | SI3812DV | SSP70R450S2 | BRA4N65 | SJMN600R65CF | STW70N60DM6-4

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