PTW50N20 PDF and Equivalents Search

 

PTW50N20 Specs and Replacement

Type Designator: PTW50N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 660 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-3P

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PTW50N20 datasheet

 ..1. Size:868K  pipsemi
 ptw50n20.pdf pdf_icon

PTW50N20

PTW50N20 200V N-Channel MOSFET General Features BVDSS RDS(ON),typ. ID Proprietary New Planar Technology 200V 40m 50A RDS(ON),typ.=40m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor TV Main Power SMPS Power Supply LCD Panel Power Ordering Information Part Number Package Brand PTW50... See More ⇒

Detailed specifications: PTP540, PTP9506E, PTB9506E, PTW09N90, PTW20N50A, PTW28N50, PTW30N50EL, PTW36N60, IRFP460, PTW69N30, PTW90N20, SPTA60R130E, SPTA65R350E, SPTP65R160, SPTA65R160, RU1H150R, RU1H150S

Keywords - PTW50N20 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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