SPTA65R160 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPTA65R160
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220F
SPTA65R160 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPTA65R160 Datasheet (PDF)
sptp65r160 spta65r160.pdf
SPTP65R160 SPTA65R160 650V N-ch Super-Junction MOSFET General Features BVDSS@ T ID J=150 RDS(ON),typ. Proprietary New Super-Junction Technology 700V 0.16 20A RDS(ON),typ.=0.16 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Inf
spta65r350e.pdf
SPTA65R350E 650V N-ch Multi-Epi Super-Junction MOSFET RDS(ON),typ. ID General Features BVDSS@TjMAX Multi-Epi Process 700V 0.32 12A Proprietary New Super-Junction Technology RDS(ON),typ.=0.32@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S SMPS Standby Power TO-220F Ordering Information Pa
spta60r130e.pdf
SPTA60R130E 600V N-ch Multi-Epi Super-Junction MOSFET RDS(ON),typ. ID General Features BVDSS@TjMAX Multi-Epi Process 650V 0.11 25A Proprietary New Super-Junction Technology RDS(ON),typ.=0.11@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor G Charger D S SMPS Standby Power TO-220F Ordering Information
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
