RU1H150S PDF and Equivalents Search

 

RU1H150S Specs and Replacement

Type Designator: RU1H150S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 288 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 108 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 1250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO-263

RU1H150S substitution

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RU1H150S datasheet

 ..1. Size:372K  ruichips
ru1h150s.pdf pdf_icon

RU1H150S

RU1H150S N-Channel Advanced Power MOSFET Features Pin Description 108V/150A, RDS (ON) =3.5m (Typ.)@VGS=10V D Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D D D D D D D Applicat... See More ⇒

 7.1. Size:431K  ruichips
ru1h150r.pdf pdf_icon

RU1H150S

RU1H150R N-Channel Advanced Power MOSFET Features Pin Description 108V/150A, RDS (ON) =3.5m (Typ.)@VGS=10V Advanced HEFET Technology Ultra Low On-Resistance Excellent QgxRDS(on) Product 100% avalanche tested 100% l h t t d 175 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D D D D D D D Applicat... See More ⇒

 9.1. Size:292K  ruichips
ru1h130q.pdf pdf_icon

RU1H150S

RU1H130Q N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO247 D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S N-Chan... See More ⇒

 9.2. Size:321K  ruichips
ru1h130r.pdf pdf_icon

RU1H150S

RU1H130R N-Channel Advanced Power MOSFET Features Pin Description 100V/130A, RDS (ON) =7m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) G D S TO220 D Applications High Efficiency Synchronous Rectification in SMPS High Speed Power Switching G S N-Chan... See More ⇒

Detailed specifications: PTW50N20, PTW69N30, PTW90N20, SPTA60R130E, SPTA65R350E, SPTP65R160, SPTA65R160, RU1H150R, AO3400, RU206B, RU207C, RU20C10H, RU20P4C6, RU20P7C, RU30120R, RU3060L, RU3080L

Keywords - RU1H150S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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