RU206B Datasheet and Replacement
Type Designator: RU206B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOT-23
RU206B substitution
RU206B Datasheet (PDF)
ru206b.pdf

RU206BN-Channel Advanced Power MOSFETFeatures Pin Description 20V/6A, RDS (ON) =20m(Typ.)@VGS=4.5VD RDS (ON) =26m(Typ.)@VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedG Lead Free and Green AvailableSSOT23Applications Load Switch PWM ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating Un
ru2060l.pdf

RU2060LN-Channel Advanced Power MOSFETFeatures Pin Description 20V/55A,D RDS (ON) =3.5m(Typ.)@VGS=10V RDS (ON) =4.5m(Typ.)@VGS=4.5V Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices (RoHS Compliant)GSTO252DApplications DC-DC Converters Load SwitchG Power Managemen
ru206g.pdf

RU206GN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/6A,RDS (ON) =18m (Typ.) @ VGS=4.5VRDS (ON) =24m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and RuggedTSSOP-8 Lead Free and Green AvailableApplications Power ManagementDual N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA
Datasheet: PTW69N30 , PTW90N20 , SPTA60R130E , SPTA65R350E , SPTP65R160 , SPTA65R160 , RU1H150R , RU1H150S , AON6414A , RU207C , RU20C10H , RU20P4C6 , RU20P7C , RU30120R , RU3060L , RU3080L , RU3089M .
History: 2SK3642-ZK
Keywords - RU206B MOSFET datasheet
RU206B cross reference
RU206B equivalent finder
RU206B lookup
RU206B substitution
RU206B replacement
History: 2SK3642-ZK



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