RU206B MOSFET. Datasheet pdf. Equivalent
Type Designator: RU206B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10 nC
trⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 125 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOT-23
RU206B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU206B Datasheet (PDF)
ru206b.pdf
RU206BN-Channel Advanced Power MOSFETFeatures Pin Description 20V/6A, RDS (ON) =20m(Typ.)@VGS=4.5VD RDS (ON) =26m(Typ.)@VGS=2.5V Low RDS (ON) Super High Dense Cell Design Reliable and RuggedG Lead Free and Green AvailableSSOT23Applications Load Switch PWM ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating Un
ru206g.pdf
RU206GN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/6A,RDS (ON) =18m (Typ.) @ VGS=4.5VRDS (ON) =24m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and RuggedTSSOP-8 Lead Free and Green AvailableApplications Power ManagementDual N-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
