RU30120R MOSFET. Datasheet pdf. Equivalent
Type Designator: RU30120R
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 65 nC
trⓘ - Rise Time: 106 nS
Cossⓘ - Output Capacitance: 480 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-220
RU30120R Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RU30120R Datasheet (PDF)
ru30120r.pdf
RU30120RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/120A,RDS (ON) =2.5m (Typ.) @ VGS=10VRDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum Ra
ru30120s.pdf
RU30120SN-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A, RDS (ON) =2.5m(Typ.)@VGS=10VD RDS (ON) =3.3m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum
ru30120l.pdf
RU30120LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/120A,RDS (ON) =2.5m (Typ.) @ VGS=10VRDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO252 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum Rat
ru30100l.pdf
RU30100LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/100A,RDS (ON) =2.2 m(Typ.)@VGS=10VRDS (ON) =4 m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Proces
ru30160r.pdf
RU30160RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/160A,RDS (ON) =2.3m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC ConvertersN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCom
ru3013h.pdf
RU3013HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/11A,RDS (ON) =16m (Typ.) @ VGS=10VRDS (ON) =24m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Othe
ru3010h.pdf
RU3010HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/8A,RDS (ON) =18m (Typ.) @ VGS=10VRDS (ON) =40m (Typ.) @ VGS=4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications SMPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings (TA=25C Unless Other
ru30100r.pdf
RU30100RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =4 m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Max
ru30105r.pdf
RU30105RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/125A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications DC-DC Converters and Off-line UPSN-Channel MOSFETAbsolute Maximum RatingsSymbolParamete
ru30105l.pdf
RU30105LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/110A,RDS (ON) =3.2 m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processor Power DC-DC Converters
ru30140r.pdf
RU30140RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/140A,RDS (ON) =3m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching ApplicationsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating Unit
ru30160s.pdf
RU30160SN-Channel Advanced Power MOSFETFeatures Pin Description 30V/160A, RDS (ON) =2.3m(Typ.)@VGS=10VD Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications DC-DC ConvertersGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating U
ru30106l.pdf
RU30106LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/130A,RDS (ON) =2.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications High Frequency Synchronous BuckConverters for Computer Processo
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
