RU30120R PDF and Equivalents Search

 

RU30120R Specs and Replacement

Type Designator: RU30120R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 106 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO-220

RU30120R substitution

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RU30120R datasheet

 ..1. Size:302K  ruichips
ru30120r.pdf pdf_icon

RU30120R

RU30120R N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ra... See More ⇒

 7.1. Size:317K  ruichips
ru30120s.pdf pdf_icon

RU30120R

RU30120S N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.)@VGS=10V D RDS (ON) =3.3m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% Avalanche Tested Lead Free and Green Devices Available (RoHS Compliant) G S TO263 D Applications DC-DC Converters G S N-Channel MOSFET Absolute Maximum ... See More ⇒

 7.2. Size:276K  ruichips
ru30120l.pdf pdf_icon

RU30120R

RU30120L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/120A, RDS (ON) =2.5m (Typ.) @ VGS=10V RDS (ON) =3.3m (Typ.) @ VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Rat... See More ⇒

 7.3. Size:557K  ruichips
ru30120m3.pdf pdf_icon

RU30120R

RU30120M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =1.8m (Typ.)@VGS=10V D D D RDS (ON) =2.3m (Typ.)@VGS=4.5V D Uses Ruichips advanced TrenchTM technology Ultra Low On-Resistance G Fast Switching Speed S S 100% avalanche tested S Lead Free and Green Devices (RoHS Compliant) PIN1 DFN3030 D Applications Fast Ch... See More ⇒

Detailed specifications: SPTA65R160, RU1H150R, RU1H150S, RU206B, RU207C, RU20C10H, RU20P4C6, RU20P7C, 2N7000, RU3060L, RU3080L, RU3089M, RU3091M, RU30D20M2, RU30D20M3, RU30J30M, RU30L70L

Keywords - RU30120R MOSFET specs

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