RU3089M MOSFET Datasheet: N-Ch, 30V, 90A. Full specification with pinout and replacement list

RU3089M Specs and Replacement

Type Designator: RU3089M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 1280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: PDFN5060

RU3089M substitution

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RU3089M datasheet

..1. Size:383K ruichips
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RU3089M N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, RDS (ON) =2.4m (Typ.)@VGS=10V D D D D RDS (ON) =3m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters Load switch G ... See More ⇒

8.1. Size:293K ruichips
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RU3089L N-Channel Advanced Power MOSFET MOSFET Features Pin Description 30V/89A, RDS (ON) =3.8m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications Switching Application Systems N-Channel MOSFET Absolute Maximum... See More ⇒

9.1. Size:403K ruichips
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RU3080L N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, RDS (ON) =2.6m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U... See More ⇒

Detailed specifications: RU206B, RU207C, RU20C10H, RU20P4C6, RU20P7C, RU30120R, RU3060L, RU3080L, 7N65, RU3091M, RU30D20M2, RU30D20M3, RU30J30M, RU30L70L, RU30S15H, RU40190R, RU40191S