All MOSFET. RU3089M Datasheet

 

RU3089M Datasheet and Replacement


   Type Designator: RU3089M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 1280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: PDFN5060
 

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RU3089M Datasheet (PDF)

 ..1. Size:383K  ruichips
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RU3089M

RU3089MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,RDS (ON) =2.4m(Typ.)@VGS=10V DDDDRDS (ON) =3m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters Load switchG

 8.1. Size:293K  ruichips
 ru3089l.pdf pdf_icon

RU3089M

RU3089LN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 30V/89A,RDS (ON) =3.8m (Typ.)@VGS=10VRDS (ON) =5m (Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-252 Lead Free and Green Devices Available(RoHS Compliant)Applications Switching Application SystemsN-Channel MOSFETAbsolute Maximum

 9.1. Size:403K  ruichips
 ru3080l.pdf pdf_icon

RU3089M

RU3080L N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, RDS (ON) =2.6m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-252 Lead Free and Green Devices Available (RoHS Compliant) Applications DC-DC Converters N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating U

Datasheet: RU206B , RU207C , RU20C10H , RU20P4C6 , RU20P7C , RU30120R , RU3060L , RU3080L , STP75NF75 , RU3091M , RU30D20M2 , RU30D20M3 , RU30J30M , RU30L70L , RU30S15H , RU40190R , RU40191S .

History: SWD5N65K | SFP730 | RU30P3B | IRF7389PBF | RU30P4B | SSM9971GJ

Keywords - RU3089M MOSFET datasheet

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