All MOSFET. RU30S15H Datasheet

 

RU30S15H Datasheet and Replacement


   Type Designator: RU30S15H
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP-8
 

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RU30S15H Datasheet (PDF)

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RU30S15H

RU30S15HP-Channel Advanced Power MOSFETFeatures Pin Description -30V/-15A,D2 RDS (ON) =15m(Typ.)@VGS=-10VD2 RDS (ON) =22m(Typ.)@VGS=-4.5VD1 Low On-ResistanceD1 Super High Dense Cell Design Reliable and RuggedG2 Lead Free and Green Devices Available (RoHS Compliant)S2G1pin1S1SOP-8ApplicationsPower managementLoad switchBa

 9.1. Size:291K  ruichips
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RU30S15H

RU30S5HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-5A,RDS (ON) =38m (Typ.) @ VGS=-10VRDS (ON) =56m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.Dual P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Ratings

 9.2. Size:291K  ruichips
 ru30s4h.pdf pdf_icon

RU30S15H

RU30S4HP-Channel Advanced Power MOSFETMOSFETFeatures Pin Description -30V/-4.8A,RDS (ON) =50m (Typ.) @ VGS=-10VRDS (ON) =80m (Typ.) @ VGS=-4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green AvailableSOP-8Applications Power Management.Dual P-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Rating

Datasheet: RU3060L , RU3080L , RU3089M , RU3091M , RU30D20M2 , RU30D20M3 , RU30J30M , RU30L70L , 12N60 , RU40190R , RU40191S , RU40C40L4 , RU6070L-A , RU6085H , RU6199S , RU6888 , RU7080R .

History: IRLU120PBF | SFG12R12DF | WMR140NV6LG4

Keywords - RU30S15H MOSFET datasheet

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