RU6199S Specs and Replacement

Type Designator: RU6199S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 1500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO263

RU6199S substitution

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RU6199S datasheet

 ..1. Size:1131K  ruichips
ru6199s.pdf pdf_icon

RU6199S

RU6199S N-Channel Advanced Power MOSFET Features Pin Description 60V/200A, D RDS (ON) =2.8m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested G S Lead Free and Green Devices Available (RoHS Compliant) TO263 D Applications DC-DC Converters and Off-line UPS Switching Applications G S N-Channel MOSFET Absolu... See More ⇒

 8.1. Size:297K  ruichips
ru6199r.pdf pdf_icon

RU6199S

RU6199R N-Channel Advanced Power MOSFET Features Pin Description 60V/200A RDS (ON)=2.8 m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Absolute Maximum ... See More ⇒

 8.2. Size:285K  ruichips
ru6199q.pdf pdf_icon

RU6199S

RU6199Q N-Channel Advanced Power MOSFET Features Pin Description 60V/200A RDS (ON)=2.8 m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Absolute Maximum ... See More ⇒

Detailed specifications: RU30J30M, RU30L70L, RU30S15H, RU40190R, RU40191S, RU40C40L4, RU6070L-A, RU6085H, K3569, RU6888, RU7080R, RU7080S, RU7088R, RU75N08, RU75N08L, RU75N08S, RU8205BC6

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