RU6199S Specs and Replacement
Type Designator: RU6199S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 38 nS
Cossⓘ - Output Capacitance: 1500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO263
RU6199S substitution
- MOSFET ⓘ Cross-Reference Search
RU6199S datasheet
ru6199s.pdf
RU6199S N-Channel Advanced Power MOSFET Features Pin Description 60V/200A, D RDS (ON) =2.8m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested G S Lead Free and Green Devices Available (RoHS Compliant) TO263 D Applications DC-DC Converters and Off-line UPS Switching Applications G S N-Channel MOSFET Absolu... See More ⇒
ru6199r.pdf
RU6199R N-Channel Advanced Power MOSFET Features Pin Description 60V/200A RDS (ON)=2.8 m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available TO-220 Applications Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Absolute Maximum ... See More ⇒
ru6199q.pdf
RU6199Q N-Channel Advanced Power MOSFET Features Pin Description 60V/200A RDS (ON)=2.8 m (Typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free and Green Devices Available Applications TO-247 Automotive applications and a wide variety of other applications High Efficiency Synchronous in SMPS High Speed Power Switching N-Channel MOSFET Absolute Maximum ... See More ⇒
Detailed specifications: RU30J30M, RU30L70L, RU30S15H, RU40190R, RU40191S, RU40C40L4, RU6070L-A, RU6085H, K3569, RU6888, RU7080R, RU7080S, RU7088R, RU75N08, RU75N08L, RU75N08S, RU8205BC6
Keywords - RU6199S MOSFET specs
RU6199S cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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