RU6888 MOSFET. Datasheet pdf. Equivalent

   Type Designator: RU6888
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 88 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220 TO220F TO263 TO247

RU6888 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

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