STW12N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: STW12N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 2500 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO247
STW12N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW12N60 Datasheet (PDF)
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stw12na50-.pdf
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