RU8205BC6 Specs and Replacement
Type Designator: RU8205BC6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOT23-6
RU8205BC6 substitution
- MOSFET ⓘ Cross-Reference Search
RU8205BC6 datasheet
ru8205bc6.pdf
RU8205BC6 N-Channel Advanced Power MOSFET Features Pin Description 20V/6A, G2 RDS (ON) =11m (Typ.)@VGS=4.5V RDS (ON) =16m (Typ.)@VGS=2.5V D1/D2 Low RDS (ON) G1 Super High Dense Cell Design S2 Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) D1/D2 Dual N-Channel MOSFET S1 SOT23-6 D1 D2 Applications Power Management G1 G2 ... See More ⇒
ru8205g.pdf
RU8205G N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/6A, RDS (ON) =21m (Typ.) @ VGS=4.5V RDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged TSSOP-8 Lead Free and Green Available Applications Power Management Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T... See More ⇒
ru8205c6.pdf
RU8205C6 N-Channel Advanced Power MOSFET MOSFET Features Pin Description 20V/6A, RDS (ON) =22m (Typ.) @ VGS=4.5V RDS (ON) =30m (Typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Available SOT-23-6 Applications Power Management Dual N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings ... See More ⇒
Detailed specifications: RU6199S, RU6888, RU7080R, RU7080S, RU7088R, RU75N08, RU75N08L, RU75N08S, 12N60, RU8590S, RUH1H150R, RUH30120M-C, RUH30150M, RUH3051M2, RUH40130M, RUH40140M, RUH4040M2
Keywords - RU8205BC6 MOSFET specs
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