RUH30120M-C MOSFET. Datasheet pdf. Equivalent
Type Designator: RUH30120M-C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 52 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 1150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: PDFN5060
RUH30120M-C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RUH30120M-C Datasheet (PDF)
ruh30120m-c.pdf
RUH30120M-CN-Channel Advanced Power MOSFETFeatures Pin Description 30V/120A,RDS (ON) =1.6m(Typ.)@VGS=10V DDDDRDS (ON) =2.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board powe
ruh30150m.pdf
RUH30150MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/150A,RDS (ON) =0.9m(Typ.)@VGS=10V DDDDRDS (ON) =1.4m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN5060DApplications DC/DC Converters On board power
ruh30j105m.pdf
RUH30J105MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Com
ruh30j85m.pdf
RUH30J85MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/90ARDS (ON) =3.5m(Typ.)@VGS=10VRDS (ON) =5m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Complia
ruh3051m.pdf
RUH3051MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/50A,RDS (ON) =5m(Typ.)@VGS=10VDRDS (ON) =7.5m(Typ.)@VGS=4.5VDDD Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedGS Lead Free and Green Devices Available (RoHS Compliant)SSPIN1DFN5060DApplications DC/DC Converters On board power for server
ruh30j95m.pdf
RUH30J95MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/30ARDS (ON) =6m(Typ.)@VGS=10VRDS (ON) =9m(Typ.)@VGS=4.5V Die 2 30V/90ARDS (ON) =2.8m(Typ.)@VGS=10VRDS (ON) =4.2m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS Compl
ruh3051m2.pdf
RUH3051M2N-Channel Advanced Power MOSFETFeatures Pin Description 30V/50A,RDS (ON) =4.2m(Typ.)@VGS=10V DDDDRDS (ON) =6m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche testedG Lead Free and Green Devices Available (RoHS Compliant)SSSPIN1PIN1PDFN3333DApplications DC/DC Converters On board power for
ruh3025m3.pdf
RUH3025M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/25A,DRDS (ON) =10m(Typ.)@VGS=10VDDRDS (ON) =16m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-Resistance SSS ESD protected 100% Avalanche TestedPIN1 Lead Free and Green Devices (RoHS Compliant)D
ruh3090m.pdf
RUH3090MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,DDRDS (ON) =2.6m(Typ.)@VGS=10VDDRDS (ON) =3.6m(Typ.)@VGS=4.5V Using Ruichips Advanced SGTTM TechnologyG Ultra Low On-ResistanceSS 100% Avalanche TestedS Reliable and Rugged Qualified According to JEDEC CriteriaPIN1 Lead Free and Green Devices (RoHS Compliant
ruh3030m3.pdf
RUH3030M3N-Channel Advanced Power MOSFETFeatures Pin Description 30V/30A,RDS (ON) =5m(Typ.)@VGS=10VDDRDS (ON) =8.5m(Typ.)@VGS=4.5VDD Ultra Low On-Resistance Uses Ruichips advanced RUISGTTM technology 100% avalanche testedSG Lead Free and Green Devices Available (RoHS Compliant) SSPIN1PIN1DFN3030DApplications DC/DC Converters
ruh30j120m.pdf
RUH30J120MDual Asymmetric N-Channel MOSFETFeatures Pin Description Die 1 30V/50ARDS (ON) =3.8m(Typ.)@VGS=10VRDS (ON) =5.5m(Typ.)@VGS=4.5V Die 2 30V/120ARDS (ON) =2.2m(Typ.)@VGS=10VRDS (ON) =3.0m(Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche testedPIN1 Lead Free and Green Devices Available (RoHS
ruh30j51m.pdf
RUH30J51M Dual Symmetric N-Channel MOSFETFeatures Pin Description 30V/50A,S2S2RDS (ON) =5m(Typ.)@VGS=10VS2G2RDS (ON) =8m(Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching SpeedD1D1D1 100% avalanche tested 100% avalanche testedD1 Lead Free and Green Devices Available (RoHS Compliant)G1PIN1DFN5*6Applicationspp DC/DC Co
ruh3090m3-c.pdf
RUH3090M3-CN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,RDS (ON) =2.7m(Typ.)@VGS=10V DDDRDS (ON) =4m(Typ.)@VGS=4.5VD Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching LossG Ultra Low On-ResistanceSS Excellent QgxRDS(on) product(FOM) S 100% Avalanche TestedPIN1 Lead Free and Green Devi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SDF10N100JED
History: SDF10N100JED
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