SIF4N65F Datasheet and Replacement
Type Designator: SIF4N65F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 48 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-251 TO251T TO251S TO252 TO252T
SIF4N65F substitution
SIF4N65F Datasheet (PDF)
sif4n65d 2.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N65DN- MOS / N-CHANNEL POWER MOSFET SIF4N65DN- MOS / N-CHANN
sif4n65c 2.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N65CN- MOS / N-CHANNEL POWER MOSFET SIF4N65CN- MOS / N-CHANN
sif4n65c.pdf
Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N65CN- MOS / N-CHANNEL POWER MOSFET SIF4N65CN- MOS / N-CHANN
Datasheet: RUH1H150R , RUH30120M-C , RUH30150M , RUH3051M2 , RUH40130M , RUH40140M , RUH4040M2 , RUH60100M , IRF1407 , SIF5N65F , LPN1010C , LPN2010C , 2N7002KS6 , SR3400 , SR3401 , SRX3134K , D2N65 .
History: NTMS5P02R2G | FQPF14N15 | IRF7504 | 2060K. | FDB8878 | R6020ANZ | SSF1006H
Keywords - SIF4N65F MOSFET datasheet
SIF4N65F cross reference
SIF4N65F equivalent finder
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History: NTMS5P02R2G | FQPF14N15 | IRF7504 | 2060K. | FDB8878 | R6020ANZ | SSF1006H
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