All MOSFET. LPN1010C Datasheet

 

LPN1010C Datasheet and Replacement


   Type Designator: LPN1010C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52.5 nS
   Cossⓘ - Output Capacitance: 273.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO220
 

 LPN1010C substitution

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LPN1010C Datasheet (PDF)

 ..1. Size:794K  cn shenzhen chip hope micro
 lpn1010c.pdf pdf_icon

LPN1010C

LPN1010C Enhancement Mode N-Channel Power MOSFET Description Features LPN1010C use advanced FSMOSTM technology Low RDS(on)&FOM to provide low RDS(on) fast switching Extremely low switching loss low gate chargeand excellent avalanche characteristics. This device is Excellent stability and uniformity specially designed to get better ruggedness and Fast switchin

Datasheet: RUH30150M , RUH3051M2 , RUH40130M , RUH40140M , RUH4040M2 , RUH60100M , SIF4N65F , SIF5N65F , AO4407 , LPN2010C , 2N7002KS6 , SR3400 , SR3401 , SRX3134K , D2N65 , D4N65 , F10N65 .

History: LP0404N3T5G | SWB046R08E9T | SWD350R06VT | SWD6N70DA | IRF7752 | NTR1P02LT1G | SWD7N65D

Keywords - LPN1010C MOSFET datasheet

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