2N7002KS6 Specs and Replacement
Type Designator: 2N7002KS6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
Package: SOT363
2N7002KS6 substitution
- MOSFET ⓘ Cross-Reference Search
2N7002KS6 datasheet
2n7002ks6.pdf
2N7002KS6 Descriptions N-CHANNEL MOSFET in a SOT-363 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating 2200V HBM Applications Intended for use in general purpose switching and phase control applications. Pi nni ng Equivalent Circuit PIN1 4 S PIN 2 5 G PIN 3 6 D 2018-10/33 REV D Absolute Maximum Ratings(Ta=25 ... See More ⇒
h2n7002ksn.pdf
Spec. No. MOS200809 HI-SINCERITY Issued Date 2008.11.18 Revised Date 2010.04.14 MICROELECTRONICS CORP. Page No. 1/4 H2N7002KSN Pin Assignment & Symbol 3 3-Lead Plastic SOT-323 H2N7002KSN Package Code SN Pin 1 Gate 2 Source 3 Drain N-CHANNEL TRANSISTOR 2 1 Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drai... See More ⇒
jmtd2n7002ks.pdf
JMTD2N7002KS Description JMT N-channel MOSFET Features Application V =60V, I =0.2A Battery Operated Systems DS D R ... See More ⇒
jmtla2n7002ks.pdf
JMTLA2N7002KS Description JMT N-channel MOSFET Features Application V =60V, I =0.2A Battery Operated Systems DS D R ... See More ⇒
Detailed specifications: RUH40130M, RUH40140M, RUH4040M2, RUH60100M, SIF4N65F, SIF5N65F, LPN1010C, LPN2010C, 4N60, SR3400, SR3401, SRX3134K, D2N65, D4N65, F10N65, F12N65, .8205A
Keywords - 2N7002KS6 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IRHQ57110 | IRLR7821CPBF | ZXMN6A08E6TA
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