All MOSFET. 2N7002KS6 Datasheet

 

2N7002KS6 Datasheet and Replacement


   Type Designator: 2N7002KS6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: SOT363
 

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2N7002KS6 Datasheet (PDF)

 ..1. Size:435K  rectron
 2n7002ks6.pdf pdf_icon

2N7002KS6

2N7002KS6Descriptions N-CHANNEL MOSFET in a SOT-363 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBMApplications Intended for use in general purpose switching and phase control applications. Pi nni ng Equivalent Circuit PIN1 4 S PIN 2 5 G PIN 3 6 D 2018-10/33REV:D Absolute Maximum Ratings(Ta=25

 6.1. Size:156K  hsmc
 h2n7002ksn.pdf pdf_icon

2N7002KS6

Spec. No. : MOS200809 HI-SINCERITY Issued Date : 2008.11.18 Revised Date :2010.04.14 MICROELECTRONICS CORP. Page No. : 1/4 H2N7002KSN Pin Assignment & Symbol 33-Lead Plastic SOT-323 H2N7002KSN Package Code: SN Pin 1: Gate 2: Source 3: DrainN-CHANNEL TRANSISTOR 21Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drai

 6.2. Size:309K  jiejie micro
 jmtd2n7002ks.pdf pdf_icon

2N7002KS6

JMTD2N7002KSDescriptionJMT N-channel MOSFETFeatures Application V =60V, I =0.2A Battery Operated SystemsDS DR

 6.3. Size:305K  jiejie micro
 jmtla2n7002ks.pdf pdf_icon

2N7002KS6

JMTLA2N7002KSDescriptionJMT N-channel MOSFETFeatures Application V =60V, I =0.2A Battery Operated SystemsDS DR

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Datasheet: RUH40130M , RUH40140M , RUH4040M2 , RUH60100M , SIF4N65F , SIF5N65F , LPN1010C , LPN2010C , 4N60 , SR3400 , SR3401 , SRX3134K , D2N65 , D4N65 , F10N65 , F12N65 , .8205A .

History: SI2101 | AP25N10GH

Keywords - 2N7002KS6 MOSFET datasheet

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