All MOSFET. .8205S Datasheet

 

.8205S MOSFET. Datasheet pdf. Equivalent


   Type Designator: .8205S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.18 nC
   trⓘ - Rise Time: 4.7 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT23-6

 .8205S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

.8205S Datasheet (PDF)

 ..1. Size:287K  cn shenzhen fuman elec
 .8205s .8205p.pdf

.8205S .8205S

FINE MADE MICROELECTRONICS GROUP CO., LTD..8205S/P (S&CIC2050) 20V N MOS 2 3 420V N-Channel Enhancement-Mode MOSFETRDS(ON), Vgs@2.5V, Ids@3.0A = 29mRDS(ON), Vgs@4.0V, Ids@4.0A = 25mRDS(ON), Vgs@4.5V, Ids@4.5A = 22m

 0.1. Size:408K  slkor
 sl8205s.pdf

.8205S .8205S

SL8205S Power MOSFET Dual N-Channel APPLIACTION FEATURES Portable Equipment 20V 5A N-channel Trench Mosfet Battery Powered System RDSON27m @Vgs=4.5V, Id=5A RDSON36m @Vgs=2.5V, Id=3A Low gate Charge Fast switching capability High reliability and rugged SYMBOL SOT-23-6ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-Source Vo

 0.2. Size:843K  jestek
 jst8205s.pdf

.8205S .8205S

JST8205S20V,4.8ADual N-Channel MosfetFEATURESSOT-23-6LRDS(ON) 21.5m @VGS=4.5VRDS(ON) 27.5m @VGS=2.5VAPPLICATIONSLoad Switch for Portable DevicesBattery ProtectionPower ManagementMARKING Dual N-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS 20VGate-Source Voltage V 12GSI 4.8D

 0.3. Size:177K  jsmsemi
 8205a 8205s.pdf

.8205S .8205S

8205-A20V N-Channel Enhancement-Mode MOSFET 2.5V TSSOP-8/SOT-23-6 8205A/TSSOP-8 8205S/SOT-23-6 G1 NC G2654D1/D28 D1/D2S1D S2 S17 S2S16 S2G15 G2Drain123 N-Channel MOSFET Gate1Gate2So

 0.4. Size:3295K  cn szxunrui
 si8205s.pdf

.8205S .8205S

SOT-23-6 Plastic-Encapsulate MOSFETS SI8205S Dual N-Channel MOSFETSI8205S V(BR)DSS RDS(on)MAX IDMax SOT-23-60.025 @ 4.5V20V5.0A0.033 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLICATION Battery Protection Load Switch

 0.5. Size:328K  cn shenzhen fuman elec
 sc8205s.pdf

.8205S .8205S

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.SC8205S (S&CIC0706) 20V N MOS 20V N-Channel Enhancement-Mode MOSFET2 3 4RDS(ON), Vgs@1.8V, Ids@2.0A

 0.6. Size:2350K  cn vbsemi
 gtt8205s.pdf

.8205S .8205S

GTT8205Swww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23

 0.7. Size:877K  cn vbsemi
 stt8205s.pdf

.8205S .8205S

STT8205Swww.VBsemi.twDual N-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.022 at VGS = 4.5 V TrenchFET Power MOSFET6.020 1.8 nC 100 % Rg Tested0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/ECTSOP-6 D1 D 2 D Top View G1 D1 1 6 G 1

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: RD02MUS2

 

 
Back to Top