.8205S - описание и поиск аналогов

SL8205S Power MOSFET Dual N-Channel APPLIACTION FEATURES Portable Equipment 20V 5A N-channel Trench Mosfet Battery Powered System RDSON 27m @Vgs=4.5V, Id=5A RDSON 36m @Vgs=2.5V, Id=3A Low gate Charge Fast switching capability High reliability and rugged SYMBOL SOT-23-6 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Rating Unit Drain-Source Vo

JST8205S 20V,4.8A Dual N-Channel Mosfet FEATURES SOT-23-6L RDS(ON) 21.5m @VGS=4.5V RDS(ON) 27.5m @VGS=2.5V APPLICATIONS Load Switch for Portable Devices Battery Protection Power Management MARKING Dual N-CHANNEL MOSFET Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage V 12 GS I 4.8 D

8205-A 20V N-Channel Enhancement-Mode MOSFET 2.5V TSSOP-8/SOT-23-6 8205A/TSSOP-8 8205S/SOT-23-6 G1 NC G2 6 5 4 D1/D2 8 D1/D2 S1 D S2 S1 7 S2 S1 6 S2 G1 5 G2 Drain 1 2 3 N-Channel MOSFET Gate1 Gate2 So

SOT-23-6 Plastic-Encapsulate MOSFETS SI8205S Dual N-Channel MOSFET SI8205S V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.025 @ 4.5V 20V 5.0A 0.033 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLICATION Battery Protection Load Switch

FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. SC8205S ( S&CIC0706) 20V N MOS 20V N-Channel Enhancement-Mode MOSFET 2 3 4 RDS(ON), Vgs@1.8V, Ids@2.0A

GTT8205S www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 G2 3

STT8205S www.VBsemi.tw Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.022 at VGS = 4.5 V TrenchFET Power MOSFET 6.0 20 1.8 nC 100 % Rg Tested 0.028 at VGS = 2.5 V 5.0 Compliant to RoHS Directive 2002/95/EC TSOP-6 D1 D 2 D Top View G1 D1 1 6 G 1

AP8205S 20V N+N Channel Enhancement Mode MOSFET Description The AP8205S uses advanced trench technology to provide excellent R , low gate charge DS(ON) and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V, ID = 6A RDS(ON)