All MOSFET. 2302P Datasheet

 

2302P MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2302P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.5 nC
   trⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SOT23

 2302P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2302P Datasheet (PDF)

 ..1. Size:296K  cn shenzhen fuman elec
 2302p.pdf

2302P 2302P

FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.2302PS&CIC1975 N-Channel Trench Power MOSFETDescriptionGeneral DescriptionProduct Summary Trench Power LV MOSFET tech

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