6888K MOSFET. Datasheet pdf. Equivalent
Type Designator: 6888K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 78 nC
trⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 339 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO-252
6888K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
6888K Datasheet (PDF)
..1. Size:1190K cn shenzhen fuman elec
6888k.pdf
6888k.pdf
FM,FM WWW.SZLCSC.COM,SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.6888K ( 68V N-channel enhancement mode MOSFETS&CIC1741)Features General DescriptionThe 6888K uses advanced trench Extremely
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: TTD95N68A
