6888K Specs and Replacement
Type Designator: 6888K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 108 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 339 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO-252
6888K substitution
- MOSFET ⓘ Cross-Reference Search
6888K datasheet
6888k.pdf
FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6888K ( 68V N-channel enhancement mode MOSFET S&CIC1741) Features General Description The 6888K uses advanced trench Extremely... See More ⇒
Detailed specifications: 2301P, 2302P, 3050K, 3060K, 3080K, 3090K, 3415E, 4080K, IRFB31N20D, SC8205, SC8205S, PDNM6ET20V05, PNM3FD201E0, PNM3FD20V1E, PNM523T30V01, PNM723T30V01, PNMT6N1
Keywords - 6888K MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: 40N06 | STE15NA100 | AP4563AGH-HF | DMG3414UQ | BR40P03 | BSS806N | 4N100G-TA3-T
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