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6888K Specs and Replacement

Type Designator: 6888K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 339 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: TO-252

6888K substitution

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6888K datasheet

 ..1. Size:1190K  cn shenzhen fuman elec
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6888K

FM , FM WWW.SZLCSC.COM, SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. 6888K ( 68V N-channel enhancement mode MOSFET S&CIC1741) Features General Description The 6888K uses advanced trench Extremely... See More ⇒

Detailed specifications: 2301P, 2302P, 3050K, 3060K, 3080K, 3090K, 3415E, 4080K, IRFB31N20D, SC8205, SC8205S, PDNM6ET20V05, PNM3FD201E0, PNM3FD20V1E, PNM523T30V01, PNM723T30V01, PNMT6N1

Keywords - 6888K MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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