PDNM6ET20V05 Datasheet and Replacement
Type Designator: PDNM6ET20V05
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm
Package: SOT563
PDNM6ET20V05 substitution
PDNM6ET20V05 Datasheet (PDF)
pdnm6et20v05.pdf

PDNM6ET20V05 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R () I (A) DS DS(on) D20 0.29@ V =4.5V 0.5 GS1 S2 6 S2 D2 D2 5 G2 G1 G2 G1 2 3 4 S1 S1 D1 D1 Circuit Diagram Marking (Top View) Absolute maximum rating@25 Parameter
pdnm6ut20v05.pdf

PDNM6UT20V05 Dual N-Channel, Digital FET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.29@ VGS=4.5V 0.5SOT-363 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage VDS 20 VGat
pdnm6t20v7e.pdf

PDNM6T20V7E Dual N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)(m) ID(A) 20 16@ VGS=4.5V 7Internal Structure Top View(SOT23-6) D1(D2) S1 6 G1 1 D1(D2) 5 D1(D2)2 G1 G2 4 S2 3 G2 S1 S2 Absolute maximum rating@25 Parameter Symbol M
Datasheet: 3060K , 3080K , 3090K , 3415E , 4080K , 6888K , SC8205 , SC8205S , MMIS60R580P , PNM3FD201E0 , PNM3FD20V1E , PNM523T30V01 , PNM723T30V01 , PNMT6N1 , PNMT6N1-LB , PNMT6N2 , PNMT8N1 .
History: NCEP015N85LL | STP4403
Keywords - PDNM6ET20V05 MOSFET datasheet
PDNM6ET20V05 cross reference
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History: NCEP015N85LL | STP4403



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