PNM3FD201E0 Datasheet and Replacement
Type Designator: PNM3FD201E0
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.14 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: DFN1006-3L
PNM3FD201E0 substitution
PNM3FD201E0 Datasheet (PDF)
pnm3fd201e0.pdf

PNM3FD201E0 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary (V) DS(on) DDS R () I (mA) 0.4@ V =4.0V GSDFN1006-3L(Bottom View) 20 0.5@ V =2.5V 300 GS0.7@ V =1.8V GSG G P2 D D S S Circuit Diagram Marking (Top View) Absolute maximum rating@25
pnm3fd20v1e.pdf

PNM3FD20V1E N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R (m) I (A) DS DS(on) DG(1) 200@ V =4.5V GSD(3) S(2) 20 250@ V =2.5V 1 GS310@ V =1.8V GSTop View Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage V 20
Datasheet: 3080K , 3090K , 3415E , 4080K , 6888K , SC8205 , SC8205S , PDNM6ET20V05 , RU7088R , PNM3FD20V1E , PNM523T30V01 , PNM723T30V01 , PNMT6N1 , PNMT6N1-LB , PNMT6N2 , PNMT8N1 , PPMT2301 .
History: IPG20N04S4-12 | STD2NK70Z | SL8N100K | AP9915J | N6006NZ | BL10N70-A | GSM3806W
Keywords - PNM3FD201E0 MOSFET datasheet
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History: IPG20N04S4-12 | STD2NK70Z | SL8N100K | AP9915J | N6006NZ | BL10N70-A | GSM3806W



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